Reliability Datasheet RD05

Agilent HPWTTH00/FH00/TL00/FL00

Description

The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the

latest revision of MILSTD883. Agilent tests parts at the absolute maximum rated conditions recommended for the device. The

actual performance you obtain from Agilent parts depends on the electrical and environmental characteristics of your application,

but will probably be better than the performance outlined in Table 1.

SnapLED 70 Emitter

Reliability Data Sheet

T

Ta

ab

blle

e 1

1:: L

Liiffe

e T

Te

es

stts

s

D

De

em

mo

on

ns

sttrra

atte

ed

d P

Pe

errffo

orrm

ma

an

nc

ce

e

P

Po

oiin

ntt T

Ty

yp

piic

ca

all P

Pe

errffo

orrm

ma

an

nc

ce

e

S

Sttrre

es

ss

s T

Te

es

stt

T

To

otta

all

U

Un

niitts

s

U

Un

niitts

s

F

Fa

aiillu

urre

e R

Ra

atte

e

C

Co

ollo

orrs

s

C

Co

on

nd

diittiio

on

ns

s

D

De

ev

viic

ce

e H

Ho

ou

urrs

s

T

Te

es

stte

ed

d

F

Fa

aiille

ed

d

M

MT

TB

BF

F

((%

% //1

1K

K H

Ho

ou

urrs

s))

TS AllnGaP

TA = 55°C,

70,000

70

0

70,000

< 1.429

Amber and

IF = 70 mA

RedOrange

TS AllnGaP

TA = 85°C,

42,000

42

0

42,000

< 2.381

Amber and

IF = 70 mA

RedOrange

TS AllnGaP

TA = 25°C,

42,000

42

0

42,000

< 2.381

Amber and

IF = 70 mA

RedOrange

TS AllnGaP

TA = 85°C, 85% RH

42,000

42

0

42,000

< 2.381

Amber and

IF = 70 mA

RedOrange

Failure Rate Prediction

The failure rate of semiconductor devices is determined by the junction temperature of the device. The relationship between

ambient temperature and 2 actual junction temperature is given by the following:

TJ (°C) = TA (°C) + θJA PAVG

where:

TA = ambient temperature in °C

θJA = thermal resistance of junctiontoambient in °C/watt

PAVG = average power dissipated in watts

The estimated MTBF and failure rate at temperatures lower than the actual stress temperature can be determined by

using an Arrhenius model for temperature acceleration. Results of such calculations are shown in the table on the following page

using an activation energy of 0.43 eV (reference MILHDBK217).