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IRFPS40N50L Folha de dados(PDF) 1 Page - Vishay Siliconix |
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IRFPS40N50L Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91260 www.vishay.com S11-0111-Rev. C, 07-Feb-11 1 Power MOSFET IRFPS40N50L, SiHFPS40N50L Vishay Siliconix FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.86 mH, Rg = 25 , IAS = 46 A (see fig. 12). c. ISD 46 A, dI/dt 550 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) ()VGS = 10 V 0.087 Qg (Max.) (nC) 380 Qgs (nC) 80 Qgd (nC) 190 Configuration Single N-Channel MOSFET G D S G D S Super-247 Available RoHS* COMPLIANT ORDERING INFORMATION Package Super-247 Lead (Pb)-free IRFPS40N50LPbF SiHFPS40N50L-E3 SnPb IRFPS40N50L SiHFPS40N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 46 A TC = 100 °C 29 Pulsed Drain Currenta IDM 180 Linear Derating Factor 4.3 W/°C Single Pulse Avalanche Energyb EAS 920 mJ Repetitive Avalanche Currenta IAR 46 A Repetitive Avalanche Energya EAR 54 mJ Maximum Power Dissipation TC = 25 °C PD 540 W Peak Diode Recovery dV/dtc dV/dt 34 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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