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2SK3387 Folha de dados(PDF) 3 Page - Toshiba Semiconductor |
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2SK3387 Folha de dados(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3387 2002-07-22 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) ïYfsï – ID Drain current ID (A) RDS (ON) – ID 20 16 12 8 4 0 0 1 2 3 4 5 VGS = 3 V Common source Tc = 25°C Pulse test 3.2 3.5 3.8 4 6 8 10 50 40 30 20 10 0 0 2 4 6 8 10 VGS = 2.5 V Common source Tc = 25°C Pulse test 3 3.5 4 6 10 4.5 5 8 0 1 2 3 4 0 ID = 18 A 2 4 6 8 10 12 Common source Tc = 25°C Pulse test 3 9 1 1 3 5 10 10 30 50 3 5 10 30 50 100 Common source VDS = 10 V Pulse test 25 100 Tc = -55°C 0 0 1 2 3 4 5 10 20 30 Common source VDS = 10 V Pulse test Tc = -55°C 25 100 10 0.1 0.3 0.5 1 3 5 10 30 50 30 50 100 300 500 1000 Common source Tc = 25°C Pulse test 4 VGS = 10 V |
Nº de peça semelhante - 2SK3387 |
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Descrição semelhante - 2SK3387 |
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