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QXXXXLTX Folha de dados(PDF) 6 Page - Littelfuse

Nome de Peças QXXXXLTX
Descrição Electrónicos  The Quadrac is an internally triggered Triac designed for AC switching and phase control applications
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Fabricante Electrônico  LITTELFUSE [Littelfuse]
Página de início  http://www.littelfuse.com
Logo LITTELFUSE - Littelfuse

QXXXXLTX Folha de dados(HTML) 6 Page - Littelfuse

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© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/14/14
Teccor® brand Thyristors
4 / 6 / 8 / 10 / 15 Amp Quadracs
Soldering Parameters
Reflow Condition
Pb–Freeassembly
Pre Heat
-Temperature Min (T
s(min))
150°C
-Temperature Max (T
s(max))
200°C
-Time (min to max) (t
s)
60 – 180 secs
Average ramp up rate (LiquidusTemp)
(T
L) to peak
5°C/second max
T
S(max) to TL - Ramp-up Rate
5°C/second max
Reflow
-Temperature (T
L) (Liquidus)
217°C
-Temperature (t
L)
60 – 150 seconds
PeakTemperature (T
P)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (t
p)
20 – 40 seconds
Ramp-down Rate
5°C/second max
Time 25°C to peakTemperature (T
P)
8 minutes Max.
Do not exceed
280°C
Environmental Specifications
Test
Specifications and Conditions
High Temperature
Voltage Blocking
MIL-STD-750: Method 1040, Condition A
Rated V
DRM (VAC-peak), 125°C, 1008
hours
Temperature Cycling
MIL-STD-750: Method 1051
-40°C to 150°C, 15-minute dwell,
100 cycles
Biased Temperature &
Humidity
EIA/JEDEC:JESD22-A101
320VDC,85°C,85%RH,1008hours
High Temp Storage
MIL-STD-750: Method 1031
150°C, 1008 hours
Low-Temp Storage
-40°C, 1008 hours
Thermal Shock
MIL-STD-750: Method 1056
0°C to 100°C, 5-minute dwell,
10-second transfer, 10 cycles
Autoclave
(Pressure Cooker Test)
EIA/JEDEC:JESD22-A102
121°C,100%RH,2atm,168hours
Resistance to
Solder Heat
MIL-STD-750: Method 2031
260°C, 10 seconds
Solderability
ANSI/J-STD-002,Category3,TestA
Lead Bend
MIL-STD-750:Method2036,ConditionE
Physical Specifications
Terminal Finish
1005 Matte Tin-plated
Body Material
ULRecognizedepoxymeeting
flammabilityclassification94v-0
Lead Material
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating.Otherwaystoensurelonglifeforapowerdiscrete
semiconductor are proper heat sinking and selection of
voltageratingsforworstcaseconditions.Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Time
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
Preheat
Ramp-up
Ramp-up
Ramp-down
Ramp-do


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