FZT958 datasheet(4/7 Pages) DIODES

Nome de Peças	FZT958

Descrição Electrónicos	400V PNP MEDIUM POWER TRANSISTOR

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FZT958

Document number: DS36166 Rev. 6 - 2

4 of 7

www.diodes.com

December 2016

FZT958

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-400

-600

—

V

IC = -100µA

Collector-Emitter Breakdown Voltage

BVCER

-400

-600

—

V

IC = -1µA, RB  1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-400

-550

—

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8

—

V

IE = -100µA

Collector Cut-Off Current

ICBO

—

<1

—

-50

-1

nA

µA

VCB = -300V

VCB = -300V, TA = +100°C

Collector Cut-Off Current

ICER

—

<1

-50

nA

VCE = -300V, R  1kΩ

VCE = -300V, R  1kΩ, TA =

+100°C

Emitter Cut-Off Current

IEBO

—

<1

-10

nA

VEB = -6V

DC Current Transfer Static Ratio (Note 9)

hFE

100

200

—

IC = -10mA, VCE = -10V

100

200

300

IC = -0.5A, VCE = -10V

10

20

—

IC = -1A, VCE = -10V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—

-100

-150

mV

IC = -10mA, IB = -1mA

—

-150

-200

IC = -100mA, IB = -10mA

—

-340

-400

IC = -500mA, IB = -100mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—

-830

-950

mV

IC = -0.5A, IB = -100mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—

-725

-840

mV

IC = -0.5A, VCE = -10V

Transitional Frequency

fT

—

85

—

MHz

IC = -100mA, VCE = -10V,

f = 50MHz

Output Capacitance

COBO

—

19

—

pF

VCB = -20V, f = 1MHz

Switching Time

tON

—

104

—

ns

VCC = -100V, IC = -500mA,

IB1 = -IB2 = -50mA

tOFF

—

2,400

—

Note:

9. Measured under pulsed conditions. Pulse width

 300μs. Duty cycle  2%.

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