Document No. D14866EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1008

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

©

2002

The 2SA1008 is a mold power transistor developed for high-speed

switching, and is ideal for use as a driver in devices such as switching

regulators, DC/DC converters, and high-frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2331

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

−100

V

Collector to emitter voltage

−100

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−2.0

A

Collector current (pulse)

PW

≤ 300

µs,

duty cycle

≤ 10%

−4.0

A

Base current (DC)

−1.0

A

°C

15

W

Total power dissipation

°C

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SA1008

TO-220AB

(TO-220AB)