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S29GL01GP Folha de dados(PDF) 56 Page - Cypress Semiconductor

Nome de Peças S29GL01GP
Descrição Electrónicos  1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
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Fabricante Electrônico  CYPRESS [Cypress Semiconductor]
Página de início  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL01GP Folha de dados(HTML) 56 Page - Cypress Semiconductor

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Document Number: 002-00886 Rev. *B
Page 56 of 83
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7.3
S29GL-P Erase and Program Operations
Notes
1. Not 100% tested.
2. See Section 11.6 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
S29GL-P Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
100
110
120
130
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
130
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH CE# High during toggle bit polling
Min
20
ns
tOEPH Output Enable High during toggle bit polling
Min
20
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1 tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
480
µs
Effective Write Buffer Program Operation (Notes
2, 4)
Per Word
Typ
15
µs
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
35
µs
tBUSY Erase/Program Valid to RY/BY# Delay
Max
90
ns
tSEA
Sector Erase Timeout
Max
50
µs


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