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BTS3035EJ Folha de dados(PDF) 9 Page - Infineon Technologies AG

Nome de Peças BTS3035EJ
Descrição Electrónicos  Smart Low-Side Power Switch
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS3035EJ Folha de dados(HTML) 9 Page - Infineon Technologies AG

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Datasheet
9
Rev. 1.0
2016-09-12
HITFET - BTS3035EJ
Smart Low-Side Power Switch
General Product Characteristics
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Unclamped repetitive
inductive energy pulse with
100k cycles
EAR(100k)
––
84
mJ
IL(0) = IL(NOM)
VBAT = 13.5 V
TJ(0) = 105 °C
P_4.1.36
Unclamped repetitive
inductive energy pulse with
1M
EAR(1M)
––
67
mJ
IL(0) = IL(NOM)
VBAT = 13.5 V
TJ(0) = 105 °C
P_4.1.42
Temperatures
Operating temperature
TJ
-40
+150 °C
P_4.1.52
Storage temperature
TSTG
-55
+150 °C
P_4.1.53
ESD Susceptibility
ESD susceptibility (all pins)
VESD
-3
3
kV
HBM4)
P_4.1.54
ESD susceptibility OUT-pin to
GND
VESD
-10
10
kV
HBM5)
P_4.1.55
ESD susceptibility
VESD
-1
1
kV
CDM6)
P_4.1.56
ESD susceptibility non-
corner pins
VESD
-1
1
kV
CDM7)
P_4.1.57
1) Not subject to production test, specified by design.
2) VBAT(LD) is setup without the DUT connected to the generator per ISO 7637-1;
RI is the internal resistance of the load dump test pulse generator;
tD is the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2.
3) Maximum allowed value. Consider also inverse input current in inverse condition IIN(-VOUT) in Chapter 9
4) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF)
5) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF)
6) ESD susceptibility, Charged Device Model “CDM” ESDA STM5.3.1 or ANSI/ESD S.5.3.1
7) ESD susceptibility, Charged Device Model “CDM” ESDA STM5.3.1 or ANSI/ESD S.5.3.1
Table 2
Absolute Maximum Ratings 1) (cont’d)
Tj = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)
Parameter
Symbol
Values
Unit
Note or Test Condition
Number
Min. Typ. Max.


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