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BTS3080EJ Folha de dados(PDF) 11 Page - Infineon Technologies AG |
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BTS3080EJ Folha de dados(HTML) 11 Page - Infineon Technologies AG |
11 / 45 page Datasheet 11 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch General Product Characteristics 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. 4.3.1 PCB set up The following PCB set up was implemented to determine the transient thermal impedance1) Figure 4 Cross section JEDEC2s2p Table 4 Thermal Resistance PG-TDSO8-31 Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to Soldering Point RthJSP –4.1 –K/W 1) 2) 1) Not subject to production test, specified by design 2) Specified RthJSP value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). TA = 85°C. Device is loaded with 1 W power. P_4.3.5 Junction to Ambient (2s2p) RthJA(2s2p) – 37 – K/W 1) 3) 3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (Chip + Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Where applicable a thermal via array under the ex posed pad contacted the first inner copper layer. TA = 85°C, Device is loaded with 1 W power. P_4.3.11 Junction to Ambient (1s0p+600 mm2 Cu) RthJA(1s0p) –48 – K/W 1) 4) 4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip + Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600 mm2 and 70 µm thickness. TA = 85°C, Device is loaded with 1 W power. P_4.3.17 Junction to Ambient (1s0p+300 mm2 Cu) RthJA(1s0p) –58 – K/W 1) 5) 5) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; The product (Chip + Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 300 mm2 and 70 µm thickness. TA = 85°C, Device is loaded with 1 W power. P_4.3.23 1) (*) means percentual Cu metalization on each layer 70µm modelled (traces) 35µm, 100% metalization* 70µm, 5% metalization* |
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