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KFG1216U2A-DIB6 Folha de dados(PDF) 8 Page - Samsung semiconductor

Nome de Peças KFG1216U2A-DIB6
Descrição Electrónicos  FLASH MEMORY
Download  114 Pages
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFG1216U2A-DIB6 Folha de dados(HTML) 8 Page - Samsung semiconductor

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OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
8
OneNAND
‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control
logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB
for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of
~76ns.
The device operates up to a maximum host-driven clock frequency of 54MHz for synchronous reads at Vcc(or Vccq. Refer to chapter
4.2) with minimum 4-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are deter-
mined by programmable read latency.
OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter
register. The device includes one block-sized OTP (One Time Programmable) area that can be used to increase system security or
to provide identification capabilities.
1.6
General Overview


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