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1N2138AR Folha de dados(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Nome de Peças 1N2138AR
Descrição Electrónicos  Silicon Standard Recovery Diode
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Fabricante Electrônico  GENESIC [GeneSiC Semiconductor, Inc.]
Página de início  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N2138AR Folha de dados(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 300 V - 600 V
IF =60 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N2133A(R) 1N2135A(R)
Unit
Repetitive peak reverse voltage
VRRM
300
400
V
• Types from 300 V to 600 V VRRM
2. Reverse polarity (R): Stud is anode.
1N2133A thru 1N2138AR
1N2138A(R)
500
1N2137A(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Silicon Standard
Recovery Diode
Conditions
600
pp
g
RMS reverse voltage
VRMS
210
280
V
DC blocking voltage
VDC
50
100
V
Continuous forward current
IF
60
60
A
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
1N2133A(R) 1N2135A(R)
Unit
Diode forward voltage
1.1
1.1
10
10
μA
15
15
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.65
0.65
°C/W
15
A
1050
Reverse current
IR
VF
1050
1N2138A(R)
10
10
VR = 50 V, Tj = 25 °C
IF = 60 A, Tj = 25 °C
TC ≤ 150 °C
Conditions
350
1050
1050
-55 to 150
60
60
-55 to 150
0.65
1.1
1.1
15
IF,SM
1N2137A(R)
0.65
VR = 50 V, Tj = 150 °C
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
420
200
150
Surge non-repetitive forward
current, Half Sine Wave
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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