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LD1010D Folha de dados(PDF) 3 Page - List of Unclassifed Manufacturers |
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LD1010D Folha de dados(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 5 page Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) RDS(ID=-10A) vs IG, at Room Temperature. 0.0030 0.0032 0.0034 0.0036 0.0038 0.0040 0.0042 0.0044 0.0046 0.0048 0.0050 0.0052 0.0054 0.0056 0.001 0.010 0.100 1.000 IG(A) RDS(ID=-10A) vs IG, at Room Temperature. 0.0030 0.0032 0.0034 0.0036 0.0038 0.0040 0.0042 0.0044 0.0046 0.0048 0.0050 0.0052 0.0054 0.0056 0.001 0.010 0.100 1.000 IG(A) Total Gate Charge curves -5 -4 -3 -2 -1 0 1 2 0 1020 30 405 QtotG(nC) DC Charges Region Capacitive Charges Region Total Gate Charge curves -5 -4 -3 -2 -1 0 1 2 0 1020 30 405 QtotG(nC) DC Charges Region Capacitive Charges Region 00 Figure 1 – RDSON vs Gate Current at ID – 10A Figure 2 – Total Gate Charge Capacitance vs VDS, VGS=-4V at Room Temp 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 VDSV) Ciss Coss Crss BVgs plot: Id vs Vds for Vgs=-4V 0.00E+00 2.00E-04 4.00E-04 6.00E-04 8.00E-04 1.00E-03 1.20E-03 1.40E-03 0 5 10 15 20 25 30 Vds(V) Figure 3 – Breakdown Voltage Vds vs Id Figure 4 – Capacitance vs Drain Voltage Vds IG vs VGS, Drain Open Room Temp -1.3E-03 -1.1E-03 -9.0E-04 -7.0E-04 -5.0E-04 -3.0E-04 -1.0E-04 1.0E-04 3.0E-04 5.0E-04 -14 -12 -10 -8-6 -4-2 0 2 VGSV) IG vs VGS, Source and Drain Grounded. At Room Temperature 0.E+00 1.E-02 2.E-02 3.E-02 4.E-02 5.E-02 6.E-02 7.E-02 8.E-02 9.E-02 1.E-01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS(V) IG vs VGS, Source and Drain Grounded. At Room Temperature 0.E+00 1.E-02 2.E-02 3.E-02 4.E-02 5.E-02 6.E-02 7.E-02 8.E-02 9.E-02 1.E-01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS(V) Figure 5 – IG vs Gate Voltage VGS Figure 6 – Typical Gate Voltage Characteristic Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010D Product Specification 3 |
Nº de peça semelhante - LD1010D |
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Descrição semelhante - LD1010D |
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