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LD1010D Folha de dados(PDF) 3 Page - List of Unclassifed Manufacturers

Nome de Peças LD1010D
Descrição Electrónicos  High Performance N-Channel POWERJFET with PN Diodes
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LD1010D Folha de dados(HTML) 3 Page - List of Unclassifed Manufacturers

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Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
RDS(ID=-10A) vs IG, at Room Temperature.
0.0030
0.0032
0.0034
0.0036
0.0038
0.0040
0.0042
0.0044
0.0046
0.0048
0.0050
0.0052
0.0054
0.0056
0.001
0.010
0.100
1.000
IG(A)
RDS(ID=-10A) vs IG, at Room Temperature.
0.0030
0.0032
0.0034
0.0036
0.0038
0.0040
0.0042
0.0044
0.0046
0.0048
0.0050
0.0052
0.0054
0.0056
0.001
0.010
0.100
1.000
IG(A)
Total Gate Charge curves
-5
-4
-3
-2
-1
0
1
2
0
1020
30
405
QtotG(nC)
DC Charges Region
Capacitive
Charges
Region
Total Gate Charge curves
-5
-4
-3
-2
-1
0
1
2
0
1020
30
405
QtotG(nC)
DC Charges Region
Capacitive
Charges
Region
00
Figure 1 – RDSON vs Gate Current at ID – 10A
Figure 2 – Total Gate Charge
Capacitance vs VDS, VGS=-4V
at Room Temp
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
VDSV)
Ciss
Coss
Crss
BVgs plot: Id vs Vds for Vgs=-4V
0.00E+00
2.00E-04
4.00E-04
6.00E-04
8.00E-04
1.00E-03
1.20E-03
1.40E-03
0
5
10
15
20
25
30
Vds(V)
Figure 3 – Breakdown Voltage Vds vs Id
Figure 4 – Capacitance vs Drain Voltage Vds
IG vs VGS, Drain Open
Room Temp
-1.3E-03
-1.1E-03
-9.0E-04
-7.0E-04
-5.0E-04
-3.0E-04
-1.0E-04
1.0E-04
3.0E-04
5.0E-04
-14
-12
-10
-8-6
-4-2
0
2
VGSV)
IG vs VGS, Source and Drain Grounded.
At Room Temperature
0.E+00
1.E-02
2.E-02
3.E-02
4.E-02
5.E-02
6.E-02
7.E-02
8.E-02
9.E-02
1.E-01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VGS(V)
IG vs VGS, Source and Drain Grounded.
At Room Temperature
0.E+00
1.E-02
2.E-02
3.E-02
4.E-02
5.E-02
6.E-02
7.E-02
8.E-02
9.E-02
1.E-01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VGS(V)
Figure 5 – IG vs Gate Voltage VGS
Figure 6 – Typical Gate Voltage
Characteristic
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010D
Product Specification
3


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