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FDS6699S Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FDS6699S Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  2 www.fairchildsemi.com FDS6699S Rev. D Electrical Characteristics T A = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C28 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C –3.2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VGS=10 V, ID =21 A, TJ=125°C 3.0 3.6 4.6 3.6 4.5 5.6 m Ω gFS Forward Transconductance VDS = 10 V, ID = 21 A 100 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 3610 pF Coss Output Capacitance 1050 pF Crss Reverse Transfer Capacitance 340 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.4 1.8 3.1 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 20 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 73 117 ns tf Turn–Off Fall Time 38 61 ns Qg(TOT) Total Gate Charge at Vgs = 10V VDD = 15 V, ID = 21 A, 65 91 nC Qg Total Gate Charge at Vgs = 5V 35 49 nC Qgs Gate–Source Charge 9nC Qgd Gate–Drain Charge 11 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) 0.36 0.7 V trr Diode Reverse Recovery Time IF = 21 A, diF/dt = 300 A/µs (Note 3) 32 ns IRM Diode Reverse Recovery Current 2.2 A Qrr Diode Reverse Recovery Charge 35 nC a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. |
Nº de peça semelhante - FDS6699S |
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Descrição semelhante - FDS6699S |
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