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KFH1G1612M-DEB5 Folha de dados(PDF) 10 Page - Samsung semiconductor

Nome de Peças KFH1G1612M-DEB5
Descrição Electrónicos  FLASH MEMORY(54MHz)
Download  125 Pages
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFH1G1612M-DEB5 Folha de dados(HTML) 10 Page - Samsung semiconductor

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OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
10
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC that has been calculated during a load or program access
Written ECC
ECC that has been stored as data in the NAND Flash array or in the BufferRAM
BufferRAM
On-chip internal buffer consisting of BootRAM and DataRAM
BootRAM
A 1KB portion of the BufferRAM reserved for Boot Code buffering
DataRAM
A 4KB portion of the BufferRAM reserved for Data buffering
Sector
Part of a Page ; 512B for the main data area and 16B for the spare area.
It is also the minimum Load/Program/Copy-Back Program unit
during a 1~4 sector operation is available.
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
2.2
Definitions


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