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2SK2900-01 Folha de dados(PDF) 2 Page - Fuji Electric

Nome de Peças 2SK2900-01
Descrição Electrónicos  N CHANNEL MOSFET
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Fabricante Electrônico  FUJI [Fuji Electric]
Página de início  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK2900-01 Folha de dados(HTML) 2 Page - Fuji Electric

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N-channel MOS-FET
2SK2900-01
60V
14,5m
Ω ±45A
60W
FAP-IIIB Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
Typical Transfer Characteristics
↑
ID=f(VDS); 80µs pulse test; TC=25°C
↑
RDS(on) = f(Tch); ID=22,5A; VGS=10V
↑
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
↑
RDS(on)=f(ID); 80µs pulse test; TC=25°C
↑
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
↑
VGS(th)=f(Tch); ID=10mA; VDS=VGS
4
5
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitances vs. VDS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
↑
C=f(VDS); VGS=0V; f=1MHz
↑
VGS=f(Qg); ID=45A; TC=25°C
↑
↑
IF=f(VSD); 80µs pulse test; Tch=25°C
7
8
9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Maximum Avalanche Energy vs. starting Tch
Safe Operation Area
EAV=f(starting Tch): VCC=24V; IAV ≤ 45A
ID=f(VDS): D=0,01, Tc=25°C
Transient Thermal impedance
↑
10
↑
12
↑
Zthch=f(t) parameter:D=t/T
starting Tch [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!


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