FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

APPLICATIONS

D DC/DC Conversion

RoHS

COMPLIANT

Si7804DN

Vishay Siliconix

Document Number: 72317

S-51129—Rev. D, 13-Jun-05

www.vishay.com

1

N-Channel 30-V (D-S) Fast Switching MOSFET

PRODUCT SUMMARY

30

10

30

8

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7804DN-T1—E3 (Lead (Pb)-Free)

N-Channel MOSFET

G

D

S

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

"20

V

10

6.5

7.5

5.0

A

Pulsed Drain Current

40

A

2.9

1.2

3.5

1.5

W

1.9

0.8

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 10 sec

R

28

35

Steady State

65

81

_C/W

Maximum Junction-to-Case (Drain)

Steady State

4.5

6.0

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.