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BTW69-1200 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BTW69-1200
Descrição Electrónicos  isc Thyristors
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
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BTW69-1200 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
BTW69-1200
APPLICATIONS
·
Available in high power packages, BTW69 Series is suitable in
applications where power handling and power dissipation are critical,
such as solid state relays, welding equipment, high power motor
·
Minimum Lot-to-Lot variations for robust device performance and
reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
1200
V
VRRM
Repetitive peak reverse voltage
1200
V
IT(AV)
Average on-stage current , Tc=70°C
31
A
IT(RMS)
RMS on-state current Tc=70°C
50
A
ITSM
Surge non-repetitive on-state current
TP=10ms
500
A
PG(AV)
Average gate power dissipation
1
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM
Tj=25℃
10
μ
A
Tj=125℃
5
mA
IDRM
Repetitive peak off-state current
VDM=VDRM
Tj=25℃
10
μ
A
Tj=125℃
5
mA
VTM
On-state voltage
ITM= 100A
1.6
V
IGT
Gate-trigger current
VD = 12 V; RL= 33Ω
50
mA
VGT
Gate-trigger voltage
VD = 12 V; RL= 33Ω
1.3
V
Rth(j-c)
Thermal resistance
Junction to case
0.45
℃
/W


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