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2SJ245L Folha de dados(PDF) 5 Page - Hitachi Semiconductor |
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2SJ245L Folha de dados(HTML) 5 Page - Hitachi Semiconductor |
5 / 7 page 1000 500 200 100 50 20 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I (A) DR di/dt = 50 A/µs V = 0 Ta = 25°C Pulse test GS Body to Drain Diode Reverse Recovery Time 2000 1000 500 200 100 50 20 0 –10 –20 –30 –40 –50 Drain to Source Voltage V (V) DS Ciss Coss Crss V = 0 f = 1 MHz GS Typical Capacitance vs. Drain to Source Voltage 0 –20 –40 –60 –80 0 8 16 24 32 40 Gate Charge Qg (nc) –100 0 –4 –8 –12 –16 –20 V = –10 V –25 V –50 V DD V = –50 V –25 V –10 V DD VDS VGS I = –5 A D Dynamic Input Characteristics 500 100 50 10 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Drain Current I (A) D 200 20 t (on) t t t (off) Switching Characteristics V = –10 V V = –30 V PW = 2 s duty 1% GS DD µ f r d d ≤ 2SJ245 L , 2SJ245 S |
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Descrição semelhante - 2SJ245L |
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