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2SK973L Folha de dados(PDF) 4 Page - Hitachi Semiconductor |
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2SK973L Folha de dados(HTML) 4 Page - Hitachi Semiconductor |
4 / 7 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 6 Gate to Source Voltage VGS (V) 8 4 2 010 0.8 1.2 1.6 2.0 0 0.4 Pulse Test ID = 1 A 5 A 2 A 2 Drain Current ID (A) 5 1.0 0.5 20 0.2 0.5 1.0 2 5 0.2 0.1 0.05 10 Static Drain to Source on State Resistance vs. Drain Current VGS = 4 V 10 V Pulse Test 80 Case Temperature TC (°C) 120 40 0 0.2 0.4 0.6 0.8 1.0 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 2 A Pulse Test VGS = 4 V VGS = 10 V 5 A 1 A 1 A, 2 A Forward Transfer Admittance vs. Drain Current 10 5 2 1.0 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1.0 5 Drain Current ID (A) 2 TC = 25°C VDS = 10 V Pulse Test –25°C 75°C 2SK973 L , 2SK973 S |
Nº de peça semelhante - 2SK973L |
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Descrição semelhante - 2SK973L |
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