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NV25128WF Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças NV25128WF
Descrição Electrónicos  EEPROM Serial 128-Kb SPI
Download  13 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NV25128WF Folha de dados(HTML) 2 Page - ON Semiconductor

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NV25128WF
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DEVICE MARKING
(UDFN8)
S7W= Specific Device Code
A
= Assembly Location
WL = Wafer Lot Number
YW = Assembly Start Week
G
= Pb−Free Package
S7W
AWLYWG
G
(Note: Microdot may be in either location)
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Notes 3, 4)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS
(VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Supply Current (Read Mode)
Read, SO open, fSCK = 10 MHz
2
mA
ICCW
Supply Current (Write Mode)
Write, CS = VCC
2
mA
ISB1
Standby Current
VIN = GND or VCC, CS = VCC,
WP = VCC, VCC = 5.5 V
3
mA
ISB2
Standby Current
VIN = GND or VCC, CS = VCC,
WP = GND, VCC = 5.5 V
5
mA
IL
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO
Output Leakage Current
CS = VCC VOUT = GND or VCC
−2
2
mA
VIL
Input Low Voltage
−0.5
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 3.0 mA
0.4
V
VOH
Output High Voltage
IOH = −1.6 mA
VCC − 0.8 V
V


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