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NV25128WF Folha de dados(PDF) 2 Page - ON Semiconductor |
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NV25128WF Folha de dados(HTML) 2 Page - ON Semiconductor |
2 / 13 page NV25128WF www.onsemi.com 2 DEVICE MARKING (UDFN8) S7W= Specific Device Code A = Assembly Location WL = Wafer Lot Number YW = Assembly Start Week G = Pb−Free Package S7W AWLYWG G (Note: Microdot may be in either location) Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature −45 to +130 °C Storage Temperature −65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units NEND (Notes 3, 4) Endurance 1,000,000 Program / Erase Cycles TDR Data Retention 100 Years 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. 3. Page Mode, VCC = 5 V, 25°C. 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) Symbol Parameter Test Conditions Min Max Units ICCR Supply Current (Read Mode) Read, SO open, fSCK = 10 MHz 2 mA ICCW Supply Current (Write Mode) Write, CS = VCC 2 mA ISB1 Standby Current VIN = GND or VCC, CS = VCC, WP = VCC, VCC = 5.5 V 3 mA ISB2 Standby Current VIN = GND or VCC, CS = VCC, WP = GND, VCC = 5.5 V 5 mA IL Input Leakage Current VIN = GND or VCC −2 2 mA ILO Output Leakage Current CS = VCC VOUT = GND or VCC −2 2 mA VIL Input Low Voltage −0.5 0.3 VCC V VIH Input High Voltage 0.7 VCC VCC + 0.5 V VOL Output Low Voltage IOL = 3.0 mA 0.4 V VOH Output High Voltage IOH = −1.6 mA VCC − 0.8 V V |
Nº de peça semelhante - NV25128WF |
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Descrição semelhante - NV25128WF |
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