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BF543 Folha de dados(PDF) 1 Page - Vishay Siliconix |
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BF543 Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 3 page BF543 Document Number 85072 Rev. 1.5, 05-Jul-05 Vishay Semiconductors www.vishay.com 1 19240 3 2 1 Electrostatic sensitive device. Observe precautions for handling. G D S N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • Integrated gate protection diode • Low feedback capacitance • Low noise figure • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High frequency stages up to 300 MHz. Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Gate, 3 = Drain Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Part Marking Package BF543 LD SOT-23 Parameter Test condition Symbol Value Unit Drain - source voltage VDS 20 V Drain current ID 30 mA Gate - source peak current ±IGSM 10 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg -55 to +150 °C Parameter Test condition Symbol Value Unit Channel ambient 1) RthChA 450 K/W e3 |
Nº de peça semelhante - BF543 |
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Descrição semelhante - BF543 |
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