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2SK3309 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SK3309 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3309 2002-09-04 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ¾ ¾ ±10 mA Gate -source breakdown voltage V (BR) GSS IG = ±10 mA, VDS = 0 V ±30 ¾ ¾ V Drain cut-off current IDSS VDS = 450 V, VGS = 0 V ¾ ¾ 100 mA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 450 550 ¾ ¾ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ¾ 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A ¾ 0.48 0.65 W Forward transfer admittance ïYfsï VDS = 10 V, ID = 5 A 1.5 4.3 ¾ S Input capacitance Ciss ¾ 920 ¾ Reverse transfer capacitance Crss ¾ 12 ¾ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 140 ¾ pF Rise time tr ¾ 25 ¾ Turn-on time ton ¾ 35 ¾ Fall time tf ¾ 10 ¾ Switching time Turn-off time toff ¾ 60 ¾ ns Total gate charge Qg ¾ 23 ¾ Gate-source charge Qgs ¾ 9 ¾ Gate-drain charge Qgd VDD ~- 360 V, VGS = 10 V, ID = 10 A ¾ 14 ¾ nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 10 A Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ 40 A Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ¾ ¾ -1.7 V Reverse recovery time trr ¾ 280 ¾ ns Reverse recovery charge Qrr IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/ms ¾ 2.7 ¾ mC Marking ※ Type K3309 ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) Duty <= 1%, tw = 10 ms 0 V 10 V VGS RL = 40 W VDD ~- 200 V ID = 5 A VOUT |
Nº de peça semelhante - 2SK3309 |
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Descrição semelhante - 2SK3309 |
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