Data Sheet D14755EJ1V0DS

7

2SK3458

PACKAGE DRAWINGS (Unit: mm)

1) TO-220AB (MP-25)

2) TO-262 (MP-25 Fin Cut)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0 TYP.

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

10 TYP.

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

4

3) TO-263 (MP-25ZK)

10.0±0.2

2.54

0.7±0.15

123

4

4.45±0.2

1.3±0.2

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.4

No plating

8.4 TYP.

0.025 to

0.25

0.25

EQUIVALENT CIRCUIT

Source (S)

Body

Diode

Gate (G)

Drain (D)

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,

and quickly dissipate it once, when it has occurred.