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DL-3150-106 Folha de dados(PDF) 1 Page - Sanyo Semicon Device |
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DL-3150-106 Folha de dados(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page DL-3150-106 No.7563 1/3 Features • Wavelength : 790 nm (Typ.) • Frame type • Compact lightweight thin package • Straight leads Absolute Maximum Ratings at Tc=25 °C (as per JISC 7032) Parameter Symbol Condition Ratings Unit Light Output Po Kink free 5 mW Reverse Voltage Laser VR -2 V PIN - 30 Operating Temperature Topr 1) --10 to +60 °C Storage Temperature Tstg 1) --40 to +85 °C Soldering Temperature Tsol 2) 260 °C 1) Case temperature 2) Soldering Time ≤3s, 1.6 mm from the root of a lead. Electrical and Optical Characteristics 3) 4) at Tc=25 °C Parameter Symbol Condition Min. Typ. Max. Unit Threshold Current Ith CW --35 50 mA Operating Current Iop Po=3mW --45 60 mA Operating Voltage Vop Po=3mW 1.6 1.8 2.3 V Peak Lasing Wavelength 5) λ p Po=3mW - 790 800 nm Light Output Power Po - - 3 - mW Beam 6) Perpendicular θ ⊥ Po=3mW 25 35 45 ° Divergence Parallel θ // Po=3mW 8 10 14 ° Off Axis Perpendicular ∆ θ ⊥ Po=3mW ---- ±3 ° Angle Parallel ∆ θ // Po=3mW ---- ±2 ° Differential Efficiency dPo/dIop Po=3mW 0.18 0.35 -- mW/mA Monitoring Output Current Im Po=3mW 0.05 0.20 0.40 mA 3) Initial values 4) All the above values are evaluated with Tottori Sanyo’s measuring apparatus 5) Wafer lot go/no-go decision criteria 6) Full angle at half maximum Note : The above product specification are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN DL-3150-106 Infrared Laser Diode Infrared Laser Diode (Frame Type) LD PD 13 2 Package Dimensions Pin Connection 91003 YY IM Ordering number : ENN7563 Pin No. 3.2 3-- 0.4 ±0.1 2- -C 0.5 8.0 0 --0.1 4.0 ±0.12 3.7 ±0.15 3.0±0.15 321 (1.6) 2--0.4 6.4 LD facet Frame type(CD) 1.6 4.2 |
Nº de peça semelhante - DL-3150-106 |
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Descrição semelhante - DL-3150-106 |
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