IRF6621 datasheet(6/9 Pages) IRF

Nome de Peças	IRF6621

Descrição Electrónicos	The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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6 / 9 page

IRF6621

6

www.irf.com

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16c. Unclamped Inductive Waveforms

tp

V(BR)DSS

IAS

Fig 16b. Unclamped Inductive Test Circuit

Fig 17b. Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

Fig 17a. Switching Time Test Circuit

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

V

DD

V

DS

L

D

D.U.T

+

-

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

Nº de peça semelhante - IRF6621

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRF6621PbF	266Kb / 10P	DirectFETPower MOSFET
	IRF6621PBF	266Kb / 10P	Ideal for CPU Core DC-DC Converters
	IRF6621PBF	266Kb / 10P	Ideal for CPU Core DC-DC Converters
	IRF6621TR1PBF	266Kb / 10P	DirectFETPower MOSFET
	IRF6621TRPbF	266Kb / 10P	DirectFETPower MOSFET

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Descrição semelhante - IRF6621

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	IRF6668PBP	636Kb / 10P	The IRF6668PbF combines the latest HEXFET짰 Power MOSFET 08/28/06
Infineon Technologies A...	IRF6715MPBBF	282Kb / 9P	The IRF6715MPbF combines the latest HEXFET짰 Power MOSFET 02/16/11
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International Rectifier	IRFP2410	147Kb / 8P	Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
Littelfuse	PGR-6100	2Mb / 1P	The PGR-6100 combines the features
Infineon Technologies A...	AUIRF1018ES	664Kb / 10P	Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. 2015-11-23
First Silicon Co., Ltd	FTK2304	311Kb / 4P	The FTK2304 uses advanced trench technology to
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IRF6621 Folha de dados(PDF) 6 Page - International Rectifier

IRF6621 Folha de dados(HTML) 6 Page - International Rectifier

Nº de peça semelhante - IRF6621

Descrição semelhante - IRF6621

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