IRFP2410

Preliminary Data Sheet PD - 9.1251

Revision 0

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Repetitive Avalanche Rated

175°C Operating Temperature

Fast Switching

Ease of Paralleling

Thermal Resistance

Description

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

0.65

Case-to-Sink, Flat, Greased Surface

––––

0.24

––––

°C/W

Junction-to-Ambient

––––

––––

40

Fourth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

It also provides greater creepage distance between pins to meet the requirements

of most safety specifications.

Absolute Maximum Ratings

Parameter

Max.

Units

61

43

A

Pulsed Drain Current

240

Power Dissipation

230

W

Linear Derating Factor

1.5

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

830

mJ

Avalanche Current

37

A

Repetitive Avalanche Energy

23

mJ

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)