SI4368DY-E3 datasheet(2/5 Pages) VISHAY

Nome de Peças	SI4368DY-E3

Descrição Electrónicos	N-Channel Reduced Qg, Fast Switching WFET

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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Si4368DY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72704

S-40105—Rev. A, 02-Feb-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 25 A

0.0026

0.0032

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 22 A

0.0029

0.0036

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 25 A

150

S

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.66

1.1

V

Dynamicb

Input Capacitance

Ciss

8340

Output Capacitance

Coss

VDS = 15 V, VGS = 0 V, f = 1 MHz

850

pF

Reverse Transfer Capacitance

Crss

355

Total Gate Charge

Qg

53

80

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 20 A

17.5

nC

Gate-Drain Charge

Qgd

DS

GS

D

6.5

Gate Resistance

Rg

f = 1 MHz

0.8

1.2

1.8

W

Turn-On Delay Time

td(on)

25

38

Rise Time

tr

VDD = 15 V, RL = 15 W

20

30

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

172

260

ns

Fall Time

tf

41

62

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

42

60

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

0

10

20

30

40

50

60

012345

VGS = 10 thru 3 V

25_C

TC = 125_C

−55_C

2 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

Nº de peça semelhante - SI4368DY-E3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4368DY	167Kb / 8P	N-Channel Reduced Qg, Fast Switching MOSFET 01-Jan-2022

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Descrição semelhante - SI4368DY-E3

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4392DY	55Kb / 5P	N-Channel Reduced Qg, Fast Switching WFET Rev. D, 26-Jul-04
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