SI4808DY datasheet(3/5 Pages) VISHAY

Nome de Peças	SI4808DY

Descrição Electrónicos	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4808DY

Vishay Siliconix

Document Number: 71157

S-03951—Rev. B, 26-May-03

www.vishay.com

2-3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 4 V

TC = 125_C

-55

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

0

200

400

600

800

1000

0

6

12

18

24

30

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

3

6

9

12

15

0.000

0.008

0.016

0.024

0.032

0.040

04

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 7.5 A

ID - Drain Current (A)

VGS = 10 V

ID = 7.5 A

VGS = 10 V

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

Nº de peça semelhante - SI4808DY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	SI4808DY-T1-E3	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET

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Descrição semelhante - SI4808DY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4818DY	68Kb / 8P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 26-May-03
	SI4816BDY	88Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 09-Aug-04
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	SI4834BDY-T1-E3	261Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-May-09
	SI4834BDY	93Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. C, 29-Dec-03
	SI4650DY	155Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-Jan-10
	SI4310BDY	152Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
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