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BA08ST Folha de dados(PDF) 9 Page - Rohm |
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BA08ST Folha de dados(HTML) 9 Page - Rohm |
9 / 10 page BA ΟΟST / BAΟΟSFP series Regulator ICs (9) When the connected load which contains a big inductance component in an output terminal is connected and the occurrence of a reverse electromotive force can be considered at the time of and power-output OFF at the time of starting, I ask the insertion of protection diode of you. (Example) Output pin (10) Although it is sure that the example of an application circuit should be recommended, in a usage, I fully ask the validation of a property of you. In addition, when you alter the circuit constant with outside and you become a usage, please see and decide sufficient margin in consideration of the dispersion in an external component and IC of our company etc. not only including the static characteristic but including a transient characteristic. This IC is monolithic IC and has P+ isolation and P substrate for an isolation between each element. A P-N junction is formed by these P layers and N layers of each element, and various kinds of parasitic elements are formed. For example, when the resistor and the transistor are connected with the pin like the example of a simple architecture, •At a resistor, it is at the time of GND > (PIN A), at a transistor (NPN), it is at the time of GND > (PIN B), A P-N junction operates as parasitism diode. •At a transistor (NPN), it is at the time of GND > (PIN B), The NPN transistor of a parasitic element operates by N layers of other elements which approach with the above- mentioned parasitism diode. A parasitic element is inevitably made according to a potential relation on the architecture of IC. When a parasitic element operates, the interference of a circuit operation is caused and the cause of a malfunction, as a result a destructive is obtained. Therefore, please be fully careful of impressing a voltage lower than GND(P substrate) to an input/output terminal etc. not to carry out usage with which a parasitic element operates. (Pin A) (Pin A) Resistor P substrate N GND GND N P N P + P + Parasitic elements Parasitic elements (Pin B) Transistor (NPN) P substrate N C B E GND N N P N P + P + Parasitic elements Parasitic elements GND (Pin B) GND C E B Other approaching elements The example of a simple architecture of bipolar IC |
Nº de peça semelhante - BA08ST |
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Descrição semelhante - BA08ST |
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