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KM68V1000BLGI-7 Folha de dados(PDF) 5 Page - Samsung semiconductor |
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KM68V1000BLGI-7 Folha de dados(HTML) 5 Page - Samsung semiconductor |
5 / 10 page KM68V1000B, KM68U1000B Family CMOS SRAM Revision 2.0 March 1998 CL1) 1. Including scope and jig capacitance AC OPERATING CONDITIONS TEST CONDITIONS( Test Load and Input/Output Reference) Input pulse level : 0.4 to 2.2V Input rising and falling time : 5ns Input and output reference voltage :1.5V Output load(see right) : CL=100pF+1TTL CL=30pF+1TTL AC CHARACTERISTICS (Commercial product :TA=0 to 70°C, Extended product :TA=-25 to 85°C, Industrial product : TA=-40 to 85°C KM68V1000B Family:Vcc=3.0~3.6V, KM68U1000B Family:Vcc=2.7~3.3V) Parameter List Symbol Speed Bins Units 70ns 100ns Min Max Min Max Read Read cycle time tRC 70 - 100 - ns Address access time tAA - 70 - 100 ns Chip select to output tCO - 70 - 100 ns Output enable to valid output tOE - 35 - 50 ns Chip select to low-Z output tLZ 10 - 10 - ns Output enable to low-Z output tOLZ 5 - 5 - ns Chip disable to high-Z output tHZ 0 25 0 30 ns Output disable to high-Z output tOHZ 0 25 0 30 ns Output hold from address change tOH 10 - 15 - ns Write Write cycle time tWC 70 - 100 - ns Chip select to end of write tCW 60 - 80 - ns Address set-up time tAS 0 - 0 - ns Address valid to end of write tAW 60 - 80 - ns Write pulse width tWP 55 - 70 - ns Write recovery time tWR 0 - 0 - ns Write to output high-Z tWHZ 0 25 0 30 ns Data to write time overlap tDW 30 - 40 - ns Data hold from write time tDH 0 - 0 - ns End write to output low-Z tOW 5 - 5 - ns DATA RETENTION CHARACTERISTICS 1. CS ≥VCC-0.2V, CS2≥VCC-0.2V(CS1 controlled) or CS2≤0.2V(CS2 controlled) Item Symbol Test Condition Min Typ Max Unit Vcc for data retention VDR CS11) ≥Vcc-0.2V 2.0 - 3.6 V Data retention current IDR KM68V1000BL/L-L Vcc=3.0V CS1 ≥Vcc-0.2V CS2 ≥Vcc-0.2V or CS2 ≤0.2V Low Power Low Low Power - - 1 0.5 30 15 µA KM68V1000BLE/LE-L KM68V1000BLI/LI-L Low Power Low Low Power - - - - 50 20 KM68U1000BL/L-L Low Power Low Low Power - - - - 25 10 KM68U1000BLE/LE-L KM68U1000BLI/LI-L Low Power Low Low Power - - - - 25 15 Data retention set-up time tSDR See data retention waveform 0 - - ms Recovery time tRDR 5 - - |
Nº de peça semelhante - KM68V1000BLGI-7 |
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Descrição semelhante - KM68V1000BLGI-7 |
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