KM736V689A datasheet(7/15 Pages) SAMSUNG

Nome de Peças	KM736V689A

Descrição Electrónicos	64Kx36 Synchronous SRAM

Download	15 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

Logo

7 / 15 page

PRELIMINARY

KM736V689A

64Kx36 Synchronous SRAM

- 7 -

Rev 2.0

December 1998

DC ELECTRICAL CHARACTERISTICS(TA=0 to 70

°C, VDD=3.3V+0.3V/-0.165V)

* VIL(Min)=-2.0(Pulse Width

≤ tCYC/2)

** VIH(Max)=4.6(Pulse Width

≤ tCYC/2)

** In Case of I/O Pins, the Max. VIH=VDDQ+0.5V

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT

Input Leakage Current(except ZZ)

IIL

VDD=Max ; VIN=VSS to VDD

-2

+2

µA

Output Leakage Current

IOL

Output Disabled, VOUT=VSS to VDDQ

-2

+2

µA

Operating Current

ICC

Device Selected, IOUT=0mA,

ZZ

≤VIL, All Inputs=VIL or VIH

Cycle Time

≥tCYC min

-44

-

440

mA

-50

-

400

-55

-

380

-60

-

360

-67

-

320

-72

-

280

Standby Current

ISB

Device deselected, IOUT = 0mA,

ZZ

≤VIL, f = Max,

All Inputs

≤0.2V or≥VDD-0.2V

-44

-

110

mA

-50

-

100

-55

-

100

-60

-

90

-67

-

80

-72

-

70

ISB1

Device deselected, IOUT = 0mA, ZZ

≤0.2V,

f=0, All Inputs=fixed (VDD-0.2V or 0.2V)

-

20

mA

ISB2

Device deselected, IOUT=0mA,

ZZ

≥VDD-0.2V, f = Max, All Inputs≤VIL or≥VIH

-

20

mA

Output Low Voltage(3.3V I/O)

VOL

IOL = 8.0mA

-

0.4

V

Output High Voltage(3.3V I/O)

VOH

IOH = -4.0mA

2.4

-

V

Output Low Voltage(2.5V I/O)

VOL

IOL = 1.0mA

-

0.4

V

Output High Voltage(2.5V I/O)

VOH

IOH = -1.0mA

2.0

-

V

Input Low Voltage(3.3V I/O)

VIL

-0.5*

0.8

V

Input High Voltage(3.3V I/O)

VIH

2.0

VDD+0.5**

V

Input Low Voltage(2.5V I/O)

VIL

-0.3*

0.7

V

Input High Voltage(2.5V I/O)

VIH

1.7

VDD+0.5**

V

TEST CONDITIONS

PARAMETER

VALUE

Input Pulse Level(for 3.3V I/O)

0 to 3V

Input Pulse Level(for 2.5V I/O)

0 to 2.5V

Input Rise and Fall Time(Measured at 0.3V and 2.7V for 3.3V I/O)

1ns

Input Rise and Fall Time(Measured at 0.3V and 2.1V for 2.5V I/O)

1ns

Input and Output Timing Reference Levels for 3.3V I/O

1.5V

Input and Output Timing Reference Levels for 2.5V I/O

VDDQ/2

Output Load

See Fig. 1

(VDD=3.3V+0.3V/-0.165V,VDDQ=3.3V+0.3/-0.165V or VDD=3.3V+0.3V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0 to 70

°C)

Nº de peça semelhante - KM736V689A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KM736V689	437Kb / 15P	64Kx36 Synchronous SRAM
Samsung semiconductor	KM736V689L	437Kb / 15P	64Kx36 Synchronous SRAM

More results

Descrição semelhante - KM736V689A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KM736V687A	476Kb / 16P	64Kx36 Synchronous SRAM
	KM736V689	437Kb / 15P	64Kx36 Synchronous SRAM
	K7A203200B	357Kb / 16P	64Kx36/x32 Synchronous SRAM
	K7A203600A	413Kb / 15P	64Kx36-Bit Synchronous Pipelined Burst SRAM
	DS_K6X8016C3B	130Kb / 9P	64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
	KM736V687	461Kb / 15P	64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP
Integrated Device Techn...	IDT71V547S	711Kb / 20P	Synchronous SRAM
Integrated Silicon Solu...	IS61LF6432A	91Kb / 16P	64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
Samsung semiconductor	KM732V595L	484Kb / 15P	32Kx32 Synchronous SRAM
Samsung semiconductor	KM732V688	509Kb / 15P	64Kx32 Synchronous SRAM

More results

KM736V689A Folha de dados(PDF) 7 Page - Samsung semiconductor

KM736V689A Folha de dados(HTML) 7 Page - Samsung semiconductor

Nº de peça semelhante - KM736V689A

Descrição semelhante - KM736V689A

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Folha de dados Download

Ligação URL