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BC848AWT1 Folha de dados(PDF) 3 Page - ON Semiconductor |
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BC848AWT1 Folha de dados(HTML) 3 Page - ON Semiconductor |
3 / 6 page BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1 3 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC847/BC848 Figure 5. Capacitances VR, REVERSE VOLTAGE (VOLTS) 10 Figure 6. Current–Gain – Bandwidth Product IC, COLLECTOR CURRENT (mAdc) 0.4 0.6 1.0 10 20 1.0 Figure 7. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage IC, COLLECTOR CURRENT (mA) 2.0 6.0 40 80 100 200 300 400 60 20 40 30 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 0.2 1.0 10 200 TA = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V VCE = 10 V TA = 25°C Figure 9. Collector Saturation Region IB, BASE CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) –1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 0.2 2.0 10 200 1.0 TA = 25°C 200 mA 50 mA IC = 10 mA 0.8 4.0 8.0 TA = 25°C Cob Cib VCE = 5 V TA = 25°C 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 mA 20 mA –1.4 –1.8 –2.2 –2.6 –3.0 0.5 5.0 20 50 100 –55 °C to 125°C θVB for VBE |
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Descrição semelhante - BC848AWT1 |
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