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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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FDZ7296 Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FDZ7296 Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDZ7296 Rev B(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 27 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –4.9 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 11 A VGS = 4.5V, ID = 10 A VGS = 10 V, ID = 11 A, TJ=125 °C 7 9 9.1 8.5 12 13 m Ω Dynamic Characteristics Ciss Input Capacitance 1520 pF Coss Output Capacitance 420 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 130 pF gFS Forward Transconductance VDS = 5 V, ID = 11 A 46 S RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.1 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 4 8 ns td(off) Turn–Off Delay Time 27 43 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 13 23 ns Qg(TOT) Total Gate Charge at Vgs=10V 22 31 nC Qg Total Gate Charge at Vgs=5V 12 17 nC Qgs Gate–Source Charge 4.5 nC Qgd Gate–Drain Charge VDD = 15 V, ID = 11 A, 3.1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.7 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 28 nS Qrr Diode Reverse Recovery Charge IF = 11A diF/dt = 100 A/µs (Note 2) 18 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 60°C/W when mounted on a 1in 2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 108°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Nº de peça semelhante - FDZ7296 |
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Descrição semelhante - FDZ7296 |
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