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BCW70LT1 Datasheet(Folha de dados) 1 Page - ON Semiconductor

Nome de Peças. BCW70LT1
descrição  General Purpose Transistors(PNP Silicon)
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Fbricantes  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 0
1
Publication Order Number:
BCW70LT1/D
BCW70LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–45
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance,
Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance,
Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Device
Package
Shipping
ORDERING INFORMATION
BCW70LT1
SOT–23
http://onsemi.com
SOT–23 (TO–236AB)
CASE 318
STYLE 6
3000 Units/Reel
DEVICE MARKING
H2x
x = Monthly Date Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
Preferred devices are recommended choices for future use
and best overall value.




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