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SI7872DP Folha de dados(PDF) 4 Page - Vishay Siliconix

Nome de Peças SI7872DP
Descrição Electrónicos  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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SI7872DP Folha de dados(HTML) 4 Page - Vishay Siliconix

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Si7872DP
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Document Number: 72035
S-21978—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET CHANNEL−1
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
2468
10
ID = 7.5 A
On-Resistance vs. Gate-to-Source Voltage
VGS - Gate-to-Source Voltage (V)
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
ID = 250 mA
Threshold Voltage
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Foot
VDS - Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
0.1
0
60
100
20
40
Single Pulse Power, Junction-to-Ambient
Time (sec)
80
110
10-1
10-2
10-3
100 ms
1 s
10 s
dc
10 ms
1 ms
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 150_C
20
10
0.1
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
1
TJ = 25_C
TC = 25_C
Single Pulse
IDM Limited
ID(on)
Limited
rDS(on) Limited
BVDSS Limited


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