KMM372C410CK datasheet(6/19 Pages) SAMSUNG

Nome de Peças	KMM372C410CK

Descrição Electrónicos	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V

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Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM372C410CK/CS

KMM372C400CK/CS

NOTES

An initial pause of 200us is required after power-up followed

by any 8 RAS-only or CAS-before-RAS refresh cycles before

proper device operation is achieved.

Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are

reference levels for measuring timing of input signals. Transi-

tion times are measured between VIH(min) and VIL(max) and

are assumed to be 5ns for all inputs.

Measured with a load equivalent to 2TTL loads and 100pF.

Operation within the

tRCD(max) limit insures that tRAC(max)

can be met.

tRCD(max) is specified as a reference point only.

If

tRCD is greater than the specified tRCD(max) limit, then

access time is controlled exclusively by

tCAC.

Assumes that

tRCD

≥tRCD(max).

This parameter defines the time at which the output achieves

the open circuit condition and is not referenced to VOH or

VOL.

tWCS is not restrictive operating parameter. It included in the

data sheet as electrical characteristic only. If

tWCS

≥tWCS(min)

the cycle is an early write cycle and the data out pin will

remain high impedance for the duration of the cycle.

Either

tRCH or tRRH must be satisfied for a read cycle.

These parameters are referenced to the CAS leading edge in

early write cycles.

Operation within the

tRAD(max) limit insures that tRAC(max)

can be met.

tRAD(max) is specified as reference point only. If

tRAD is greater than the specified tRAD(max) limit, then

access time is controlled by

tAA.

The timing skew from the DRAM to the DIMM resulted from

the addition of buffers.

1.

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Nº de peça semelhante - KMM372C410CK

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KMM372C1600BK	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C1600BS	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C1680BK	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C1680BS	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
	KMM372C213CK	430Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V

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Descrição semelhante - KMM372C410CK

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	KMM372F410CS	456Kb / 20P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
	KMM372V410CK	411Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
	KMM372V404BS	417Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM5324004CK	276Kb / 15P	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM5324000CK	265Kb / 15P	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM372F804BS	483Kb / 20P	8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM372C213CK	430Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
	KMM372C804BS	446Kb / 19P	8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
	KMM372C883CS	425Kb / 20P	8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
	KMM372C1680BS	430Kb / 18P	16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V

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