Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

KMM372F804BS Folha de dados(PDF) 4 Page - Samsung semiconductor

Nome de Peças KMM372F804BS
Descrição Electrónicos  8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
Download  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM372F804BS Folha de dados(HTML) 4 Page - Samsung semiconductor

  KMM372F804BS Datasheet HTML 1Page - Samsung semiconductor KMM372F804BS Datasheet HTML 2Page - Samsung semiconductor KMM372F804BS Datasheet HTML 3Page - Samsung semiconductor KMM372F804BS Datasheet HTML 4Page - Samsung semiconductor KMM372F804BS Datasheet HTML 5Page - Samsung semiconductor KMM372F804BS Datasheet HTML 6Page - Samsung semiconductor KMM372F804BS Datasheet HTML 7Page - Samsung semiconductor KMM372F804BS Datasheet HTML 8Page - Samsung semiconductor KMM372F804BS Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 20 page
background image
DRAM MODULE
KMM372F804BS
CAPACITANCE (TA = 25
°C, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0, B0, A1 - A11]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0 - RAS3]
Input capacitance[CAS0, 1,4,5]
Input/Output capacitance[DQ0 - 71]
CIN1
CIN2
CIN3
CIN4
CDQ
-
-
-
-
-
20
20
31
20
24
pF
pF
pF
pF
pF
Test condition : Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
84
104
ns
Read-modify-write cycle time
tRWC
128
153
ns
Access time from RAS
tRAC
50
60
ns
3,4,10
Access time from CAS
tCAC
18
20
ns
3,4,5,13
Access time from column address
tAA
30
35
ns
3,10,13
CAS to output in Low-Z
tCLZ
8
8
ns
3,13
OE to output in Low-Z
tOLZ
8
8
ns
3,13
Output buffer turn-off delay from CAS
tCEZ
8
18
8
18
ns
6,11,13
Transition time(rise and fall)
tT
1
50
1
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
13
15
ns
13
CAS hold time
tCSH
36
38
ns
13
CAS pulse width
tCAS
8
10K
10
10K
ns
RAS to CAS delay time
tRCD
15
32
18
40
ns
4,13
RAS to column address delay time
tRAD
10
20
13
25
ns
10,13
CAS to RAS precharge time
tCRP
10
10
ns
13
Row address set-up time
tASR
5
5
ns
13
Row address hold time
tRAH
5
8
ns
13
Column address set-up time
tASC
0
0
ns
14
Column address hold time
tCAH
7
10
ns
14
Column address to RAS lead time
tRAL
30
35
ns
13
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to CAS
tRCH
0
0
ns
8
Read command hold referenced to RAS
tRRH
-2
-2
ns
8,13
Write command set-up time
tWCS
0
0
ns
7
Write command hold time
tWCH
7
10
ns
Write command pulse width
tWP
7
10
ns
Write command to RAS lead time
tRWL
13
15
ns
13
Write command to CAS lead time
tCWL
7
10
ns
17
Data set-up time
tDS
-2
-2
ns
9,13
Data hold time
tDH
13
15
ns
9,13
Refresh period
tREF
64
64
ms
CAS to W delay time
tCWD
33
38
ns
7,16
RAS to W delay time
tRWD
68
82
ns
7,13
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)


Nº de peça semelhante - KMM372F804BS

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Samsung semiconductor
KMM372F803BK SAMSUNG-KMM372F803BK Datasheet
469Kb / 20P
   8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372F803BS SAMSUNG-KMM372F803BS Datasheet
469Kb / 20P
   8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
More results

Descrição semelhante - KMM372F804BS

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Samsung semiconductor
KMM372V404BS SAMSUNG-KMM372V404BS Datasheet
417Kb / 19P
   4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
KMM372F410CS SAMSUNG-KMM372F410CS Datasheet
456Kb / 20P
   4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
KMM372V410CK SAMSUNG-KMM372V410CK Datasheet
411Kb / 19P
   4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
KMM372F883BS SAMSUNG-KMM372F883BS Datasheet
469Kb / 20P
   8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372V883BK SAMSUNG-KMM372V883BK Datasheet
420Kb / 18P
   8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
KMM372C410CK SAMSUNG-KMM372C410CK Datasheet
411Kb / 19P
   4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
KMM372C804BS SAMSUNG-KMM372C804BS Datasheet
446Kb / 19P
   8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
KMM372C883CS SAMSUNG-KMM372C883CS Datasheet
425Kb / 20P
   8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
KMM372F3280CS1 SAMSUNG-KMM372F3280CS1 Datasheet
506Kb / 20P
   32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V3200CS1 SAMSUNG-KMM372V3200CS1 Datasheet
457Kb / 18P
   32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com