Revision 1.1
Jan.
2004
3
R0201-
STC62WV12816
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
--
ns
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
CIN
Input
Capacitance
VIN=0V
6
pF
CDQ
Input/Output
Capacitance
VI/O=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C2.4V ~ 5.5V
Industrial
-40 O C to +85 O C2.4V ~ 5.5V
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/t
RC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4.IccsB1_Max. is 3uA/ 10uA at Vcc=3V/ 5V and TA=70oC.
5. Icc_Max. is 30mA(@3V) / 62mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
1. Vcc = 1.5V, TA = + 25OC
2.t
RC = Read Cycle Time
3. IccDR_MAX. is 0.7uA at TA=70oC.
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
RATING
UNITS
V TERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
T BIAS
Temperature Under Bias
-40 to +85
O C
T STG
Storage Temperature
-60 to +150
O C
P T
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
STC
STC62WV12816
(3)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1) MAX.
UNITS
Vcc =3.0V
VIL
Guaranteed Input Low
Voltage
(3)
Vcc =5.0V
-0.5
--
0.8
V
Vcc =3.0V
2.0
VIH
Guaranteed Input High
Voltage
(3)
Vcc =5.0V
2.2
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max,CE = VIH or OE = VIH,
VI/O = 0V to Vcc
--
--
1
uA
Vcc =3.0V
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc =5.0V
--
--
0.4
V
Vcc =3.0V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc =5.0V
2.4
--
--
V
Vcc =3V
70ns
25
ICC
(5)
Operating Power Supply
Current
CE = VIL,
IDQ = 0mA, F = Fmax
(2)
Vcc =5V
70ns
--
--
55
mA
Vcc =3.0V
0.5
ICCSB
Standby Current-TTL
CE=VIH
IDQ = 0mA
Vcc =5.0V
--
--
1.0
mA
Vcc =3.0V
0.3
5
ICCSB1
(4)
Standby Current-CMOS
CE≧Vcc-0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
Vcc =5.0V
--
1.0
30
uA