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FQPF11N50CF Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQPF11N50CF Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP11N50CF/FQPF11N50CF Rev. A FRFETTM July 2005 FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns) Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings * Drain current limited by maximum junction temperature Thermal Characteristics TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ◀ ◀ ◀ ◀ S D G Symbol Parameter FQP11N50CF FQPF11N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 11 11 * A - Continuous (TC = 100°C) 7 7 * A IDM Drain Current - Pulsed (Note 1) 44 44 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 670 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 195 48 W - Derate above 25°C 1.56 0.39 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP11N50CF FQPF11N50CF Units RθJC Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W |
Nº de peça semelhante - FQPF11N50CF |
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Descrição semelhante - FQPF11N50CF |
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