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FQP3N50C Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQP3N50C Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP3N50C/FQPF3N50C Rev. A QFET® FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings * Drain current limited by maximum junction temperature Thermal Characteristics TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ◀ ◀ ◀ ◀ S D G Symbol Parameter FQP3N50C FQPF3N50C Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 33 * A - Continuous (TC = 100°C) 1.8 1.8 * A IDM Drain Current - Pulsed (Note 1) 12 12 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 3A EAR Repetitive Avalanche Energy (Note 1) 6.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 62 25 W - Derate above 25°C 0.5 0.2 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP3N50C FQPF3N50C Units RθJC Thermal Resistance, Junction-to-Case 2.0 4.9 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W |
Nº de peça semelhante - FQP3N50C |
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Descrição semelhante - FQP3N50C |
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