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IRLF120 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRLF120
Descrição Electrónicos  HEXFET TRANSISTORS THRU-HOLE (TO-39)
Download  7 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLF120 Folha de dados(HTML) 2 Page - International Rectifier

  IRLF120 Datasheet HTML 1Page - International Rectifier IRLF120 Datasheet HTML 2Page - International Rectifier IRLF120 Datasheet HTML 3Page - International Rectifier IRLF120 Datasheet HTML 4Page - International Rectifier IRLF120 Datasheet HTML 5Page - International Rectifier IRLF120 Datasheet HTML 6Page - International Rectifier IRLF120 Datasheet HTML 7Page - International Rectifier  
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IRLF120
2
www.irf.com
ThermalResistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
6.25
RthJA
Junction-to-Ambient
175
Typical socket mount.
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
5.3
ISM
Pulse Source Current (Body Diode) ➀
——
21
VSD
Diode Forward Voltage
2.5
V
Tj = 25°C, IS = 5.3A, VGS = 0V ➃
trr
Reverse Recovery Time
220
nS
Tj = 25°C, IF = 5.3A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
1.1
µC
VDD ≤ 50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 250µA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.13
V/°C
Reference to 25°C, ID = 250µA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.35
VGS = 5.0V, ID = 3.2A ➃
Resistance
0.42
VGS = 4.0V, ID = 2.7A ➃
VGS(th)
Gate Threshold Voltage
1.0
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
3.1
S ( )VDS = 50V, IDS = 3.2A ➃
IDSS
Zero Gate Voltage Drain Current
250
VDS= 100V, VGS=0V
1000
µA
VDS = 80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
-100
nA
VGS = -10V
Qg
Total Gate Charge
13
VGS =5.0V, ID = 5.3A
Qgs
Gate-to-Source Charge
2.4
nC
VDS= 80V
Qgd
Gate-to-Drain (‘Miller’) Charge
7.1
td(on)
Turn-On Delay Time
13
VDD = 50V, ID = 5.3A,
tr
Rise Time
53
VGS =5.0V, RG = 18Ω
td(off)
Turn-Off Delay Time
30
tf
Fall Time
27
LS + LD
Total Inductance
7.0
Ciss
Input Capacitance
480
VGS = 0V, VDS = 25V
Coss
Output Capacitance
150
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
30
nH
ns
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)


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