FDD6635 datasheet(2/8 Pages) FAIRCHILD

Nome de Peças	FDD6635

Descrição Electrónicos	35V N-Channel PowerTrench MOSFET

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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FDD6635 Rev. C2(W)

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Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics(Note 2)

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250 μA

35

V

ΔBVDSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, Referenced to 25°C

32

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 28 V,

VGS = 0 V

1

μA

IGSS

Gate–Body Leakage

VGS = ±20 V,

VDS = 0 V

±100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 μA

1

1.9

3

V

ΔVGS(th)

ΔT

J

Gate Threshold Voltage

Temperature Coefficient

ID = 250 μA, Referenced to 25°C

–5

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 15 A

VGS = 4.5 V,

ID = 13 A

VGS = 10 V,

ID = 15 A, TJ=125°C

8.2

10.2

12.4

10

13

16

m

Ω

gFS

Forward Transconductance

VDS = 5 V,

ID = 15 A

53

S

Dynamic Characteristics

Ciss

Input Capacitance

1400

pF

Coss

Output Capacitance

317

pF

Crss

Reverse Transfer Capacitance

VDS = 20 V,

V GS = 0 V,

f = 1.0 MHz

137

pF

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

1.4

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

11

20

ns

tr

Turn–On Rise Time

6

12

ns

td(off)

Turn–Off Delay Time

28

45

ns

tf

Turn–Off Fall Time

VDD = 20 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6 Ω

14

25

ns

Qg (TOT)

Total Gate Charge, VGS = 10V

26

36

nC

Qg

Total Gate Charge, VGS = 5V

13

18

nC

Qgs

Gate–Source Charge

3.9

nC

Qgd

Gate–Drain Charge

VDS = 20 V, ID = 15 A

5.3

nC

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