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FDS8870_NL Folha de dados(PDF) 9 Page - Fairchild Semiconductor |
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FDS8870_NL Folha de dados(HTML) 9 Page - Fairchild Semiconductor |
9 / 12 page FDS8870 Rev. A3 www.fairchildsemi.com 9 PSPICE Electrical Model .SUBCKT FDS8870 2 1 3 ; rev March 2004 Ca 12 8 2.8e-9 Cb 15 14 2.8e-9 Cin 6 8 4.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 33.62 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 1e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 7e-11 RLgate 1 9 10 RLdrain 2 5 10 RLsource 3 7 0.7 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 3.05e-3 Rgate 9 20 2 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 9e-4 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))} .MODEL DbodyMOD D (IS=1E-11 IKF=17 N=1.01 RS=2.8e-3 TRS1=2e-3 TRS2=2e-7 + CJO=1.95e-9 M=0.55 TT=9e-11 XTI=2.6) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=1.42e-9 IS=1e-30 N=10 M=0.38) .MODEL MmedMOD NMOS (VTO=1.85 KP=15 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2) .MODEL MstroMOD NMOS (VTO=2.2 KP=650 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MweakMOD NMOS (VTO=1.48 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=20 RS=0.1) .MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-9e-7) .MODEL RdrainMOD RES (TC1=1.8e-3 TC2=5e-6) .MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6) .MODEL RsourceMOD RES (TC1=8e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-1.8e-3 TC2=-9e-6) .MODEL RvtempMOD RES (TC1=-2.5e-3 TC2=2e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-3) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3 VOFF=-5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-0.5) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 |
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