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SDM4953A Folha de dados(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Nome de Peças. SDM4953A
descrição  Dual P-Channel 30-V (D-S) MOSFET
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Fbricantes  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.cn
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SDM4953A Folha de dados(HTML) 1 Page - VBsemi Electronics Co.,Ltd

   
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Dual P-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free
•TrenchFET® Power MOSFET
100 % UIS Tested
APPLICATIONS
Load Switches
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
d, e
Qg (Typ.)
- 30
0.02
9 at V
GS = - 10 V
-
7.3
1
7 nC
0.0
39 at V
GS = - 4.5 V
-
6.3
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
e. Limited by package.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
-
7.3e
A
TC = 70 °C
-
7.0e
TA = 25 °C
- 7.3a, b
TA = 70 °C
- 5.9a, b
Pulsed Drain Current
IDM
- 32e
Continuous Source-Drain Diode Current
TC = 25 °C
IS
- 4.1
TA = 25 °C
- 2.0a, b
Avalanche Current
L = 0.1 mH
IAS
- 20
Single-Pulse Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
5.0
W
TC = 70 °C
3.2
TA = 25 °C
2.5a, b
TA = 70 °C
1.6a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c
t
≤ 10 s
RthJA
38
50
°C/W
Maximum Junction-to-Foot
Steady State
RthJF
20
25
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
RoHS
COMPLIANT
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
SDM4953A
1


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