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SI1539CDL-T1-GE3 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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SI1539CDL-T1-GE3 Folha de dados(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 9 page Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 1 V VDS = VGS, ID = - 100 µA P-Ch - 0.45 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V N-Ch ± 100 nA P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V N-Ch 1 µA VDS = - 16 V, VGS = 0 V P-Ch - 1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch - 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 A VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 2 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 2.55 A N-Ch 0.090 Ω VGS = - 4.5 V, ID = - 1.85 A P-Ch 0.155 VGS = 2.5 V, ID = 1.55 A N-Ch 0.110 VGS = - 2.5 V, ID = - 1.35 A P-Ch 0.19+0 VGS = 1.8 V, ID = 0.50 A N-Ch 0.130 VGS = - 1.8 V, ID = - 0.50 A P-Ch 0.220 Forward Transconductancea gfs VDS = 10 V, ID = 1.13 A N-Ch 2.6 S VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 Diode Forward Voltagea VSD IS = 0.48 A, VGS = 0 V N-Ch 0.8 1.2 V IS = - 0.48 A, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.55 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Ch 1.25 2 nC P-Ch 1.2 1.8 Gate-Source Charge Qgs N-Ch 0.21 P-Ch 0.3 Gate-Drain Charge Qgd N-Ch 0.3 P-Ch 0.21 Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 15 25 ns P-Ch 18 30 Rise Time tr N-Ch 22 35 P-Ch 25 40 Turn-Off Delay Time td(off) N-Ch 25 40 P-Ch 15 25 Fall Time tf N-Ch 12 20 P-Ch 12 20 Reverse Recovery Time trr IF = 0.48 A, dI/dt = 100 A/µs N-Ch 30 60 P-Ch 30 60 SI1539CDL-T1-GE3 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 2 |
Nº de peça semelhante - SI1539CDL-T1-GE3 |
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Descrição semelhante - SI1539CDL-T1-GE3 |
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