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SI1539CDL-T1-GE3 Folha de dados(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Nome de Peças SI1539CDL-T1-GE3
Descrição Electrónicos  N- and P- Channel 20 V (D-S) MOSFET
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Fabricante Electrônico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de início  www.VBsemi.com
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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 100 µA
N-Ch
0.45
1
V
VDS = VGS, ID = - 100 µA
P-Ch
- 0.45
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
N-Ch
± 100
nA
P-Ch
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
N-Ch
1
µA
VDS = - 16 V, VGS = 0 V
P-Ch
- 1
VDS = 16 V, VGS = 0 V, TJ = 85 °C
N-Ch
5
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
P-Ch
- 5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
2
A
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
- 2
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 2.55 A
N-Ch
0.090
Ω
VGS = - 4.5 V, ID = - 1.85 A
P-Ch
0.155
VGS = 2.5 V, ID = 1.55 A
N-Ch
0.110
VGS = - 2.5 V, ID = - 1.35 A
P-Ch
0.19+0
VGS = 1.8 V, ID = 0.50 A
N-Ch
0.130
VGS = - 1.8 V, ID = - 0.50 A
P-Ch
0.220
Forward Transconductancea
gfs
VDS = 10 V, ID = 1.13 A
N-Ch
2.6
S
VDS = - 10 V, ID = - 0.88 A
P-Ch
1.5
Diode Forward Voltagea
VSD
IS = 0.48 A, VGS = 0 V
N-Ch
0.8
1.2
V
IS = - 0.48 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.55 A
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88
A
N-Ch
1.25
2
nC
P-Ch
1.2
1.8
Gate-Source Charge
Qgs
N-Ch
0.21
P-Ch
0.3
Gate-Drain Charge
Qgd
N-Ch
0.3
P-Ch
0.21
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 20 Ω
ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω
P-Channel
VDD = - 10 V, RL = 20 Ω
ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω
N-Ch
15
25
ns
P-Ch
18
30
Rise Time
tr
N-Ch
22
35
P-Ch
25
40
Turn-Off Delay Time
td(off)
N-Ch
25
40
P-Ch
15
25
Fall Time
tf
N-Ch
12
20
P-Ch
12
20
Reverse Recovery Time
trr
IF = 0.48 A, dI/dt = 100 A/µs
N-Ch
30
60
P-Ch
30
60
SI1539CDL-T1-GE3
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
2


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