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SI2318DS-T1-GE3 Folha de dados(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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SI2318DS-T1-GE3 Folha de dados(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
4 / 9 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.04 0.06 0.08 0.10 0.12 0.14 02 4 6 8 10 ID =3.2 A TJ =25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited byRDS(on)* BVDSS Limited 1ms 100 µs 10 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1s,10s www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SI2318DS-T1-GE3 4 |
Nº de peça semelhante - SI2318DS-T1-GE3 |
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Descrição semelhante - SI2318DS-T1-GE3 |
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