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SL22-L Folha de dados(PDF) 1 Page - Formosa MS

Nome de Peças SL22-L
Descrição Electrónicos  Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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Fabricante Electrônico  FORMOSA [Formosa MS]
Página de início  http://www.formosams.com
Logo FORMOSA - Formosa MS

SL22-L Folha de dados(HTML) 1 Page - Formosa MS

  SL22-L Datasheet HTML 1Page - Formosa MS SL22-L Datasheet HTML 2Page - Formosa MS  
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SL22-L THRU SL24-L
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
(V)
(V)
(V)
(V)
(
oC)
SL22-L
SL22
20
14
20
0.38
SL23-L
SL23
20
14
20
0.40
SL24-L
SL24
40
28
40
0.40
SYMBOLS
MARKING
CODE
-55 to +125
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
IO
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
50
A
VR = VRRM TA =
25
oC
1.0
mA
VR = VRRM TA = 100
oC
10
mA
Thermal resistance
Junction to ambient
RqJA
70
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
160
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Silicon epitaxial planer type
Formosa MS
Low VF Chip Schottky Barrier Diodes
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-L


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