MJ11013 MJ11015 MJ11012 MJ11014 MJ11016

3

Motorola Bipolar Power Transistor Device Data

30 k

0.3

Figure 2. DC Current Gain (1)

IC, COLLECTOR CURRENT (AMP)

0.5 0.7

1

2

3

10

20

30

7 k

3 k

2 k

700

Figure 3. Small–Signal Current Gain

2

10

f, FREQUENCY (kHz)

20

30

50

70

200 300

500

1.0 k

0.2

0.05

0.02

0.01

10 k

5 k

VCE = 5 Vdc

TJ = 25°C

500

300

5

7

100

5

0.1

Figure 4. “On” Voltages (1)

IC, COLLECTOR CURRENT (AMP)

100

0

VBE(sat)

Figure 5. Active Region DC Safe Operating Area

20 k

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

4

3

2

1

50

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

3

5

10

20

200

10

5

0.01

20

2

1

0.2

0.1

0.5

0.05

0.02

50

TJ = 25°C

IC/IB = 100

VCE = 3 Vdc

IC = 10 mAdc

TJ = 25°C

0.1

0.5

1

0.005

700

MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

2

7

30

70

100

2

20

50

0.2

0.5

1

10

5

VCE(sat)

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

BONDING WIRE LIMITATION

THERMAL LIMITATION @ TC = 25°C

SECOND BREAKDOWN LIMITATION

There are two limitations on the power handling ability of a

transistor average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE lim-

its of the transistor that must be observed for reliable opera-

tions e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.