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TS13007CZ Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13007CZ Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  TS13007 1-2 2003/12 rev. A TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE (SAT), = 3V @ Ic / Ib = 8A / 2A Features Suitable for switching regulator and motor control High speed switching Structure Silicon triple diffused type. Ordering Information Part No. Packing Package TS13007CZ Tube TO-220 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 8 Collector Current Pulse IC 16 A Base Current IB 4 A Collector Power Dissipation Tc=25 oC PD 80 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 65 to +150 oC Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- -- 1 mA Collector-Emitter Saturation Voltage IC / IB = 2A / 0.4A IC / IB = 5A / 1A IC / IB = 8A / 2A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 -- -- -- -- -- -- 1 2 3 V Base-Emitter Saturation Voltage IC / IB = 2A / 0.4A IC / IB = 5A / 1A VBE(SAT)1 VBE(SAT)2 -- -- -- -- 1.2 1.6 V DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A hFE 1 hFE 2 8 5 -- -- 60 30 Frequency VCE = 10V, IC = 0.5A fT 4 -- -- MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 110 -- pF Turn On Time tON -- -- 1.6 uS Storage Time tSTG -- -- 3 uS Fall Time VCC = 125V, IC = 5A, IB1 = 1A, IB2 = - 1A, RL = 50ohm tf -- -- 0.7 uS Note : pulse test: pulse width <=300uS, duty cycle <=2% Pin assignment: 1. Base 2. Collector 3. Emitter |
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Descrição semelhante - TS13007CZ |
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