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TSB1184CPR Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Nome de Peças TSB1184CPR
Descrição Electrónicos  Low Vce(sat) PNP Transistor
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Fabricante Electrônico  TSC [Taiwan Semiconductor Company, Ltd]
Página de início  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSB1184CPR Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSB1184
1-1
2003/12 rev. B
TSB1184
Low Vce(sat) PNP Transistor
BVCEO = - 50V
Ic = - 3A
VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Low VCE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
PNP silicon transistor
Ordering Information
Part No.
Packing
Package
TSB1184CP
Tape & Reel
TO-252
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
- 50V
V
Collector-Emitter Voltage
VCEO
- 50V
V
Emitter-Base Voltage
VEBO
- 6
V
DC
- 3
Collector Current
Pulse
IC
- 7 (note 1)
A
Collector Power Dissipation
TO-252
PD
1.0
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. Single pulse, Pw = 2mS
Electrical Characteristics
Ta = 25
oC unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = - 50uA, IE = 0
BVCBO
- 50
--
--
V
Collector-Emitter Breakdown Voltage
IC = - 1mA, IB = 0
BVCEO
- 50
--
--
V
Emitter-Base Breakdown Voltage
IE = - 50uA, IC = 0
BVEBO
- 6
--
--
V
Collector Cutoff Current
VCB = - 40V, IE = 0
ICBO
--
--
- 1
uA
Emitter Cutoff Current
VEB = - 4V, IC = 0
IEBO
--
--
- 1
uA
Collector-Emitter Saturation Voltage
IC / IB = - 2.0A / - 0.2A
VCE(SAT)
--
- 0.3
- 0.5
V
DC Current Transfer Ratio
VCE = - 2V, IC = - 1A
hFE
120
--
560
Transition Frequency
VCE = - 5V, IC = - 100mA,
f = 100MHz
fT
--
80
--
MHz
Output Capacitance
VCB = - 10V, f=1MHz
Cob
55
--
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of hFE
Rank
Q
R
S
Range
120 - 270
180 - 390
270 - 560
Pin Assignment:
1. Base
2. Collector
3. Emitter


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